ipp08cn10l g opti mos ? 2 power-transistor features ? n-channel, logic level ? excellent gate charge x r ds(on) product (fom) ? very low on-resistance r ds(on) ? 175 c operating temperature ? pb-free lead plating; rohs compliant ? qualified according to jedec 1) for target application ? ideal for high-frequency switching and synchronous rectification maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t c =25 c 98 a t c =100 c 70 pulsed drain current 2) i d,pulse t c =25 c 392 avalanche energy, single pulse e as i d =98 a, r gs =25 : 254 mj reverse diode d v /d t d v /d t i d =95 a, v ds =80 v, d i /d t =100 a/s, t j,max =175 c 6 kv/s gate source voltage 3) v gs 20 v power dissipation p tot t c =25 c 167 w operating and storage temperature t j , t stg -55 ... 175 c iec climatic category; din iec 68-1 55/175/56 value v ds 100 v r ds(on),max 8 m : i d 98 a product summary type ipp08cn10l g package pg-to220-3 marking 08cn10l rev. 0.6 page 1 2007-08-30
ipp08cn10l g parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - case r thjc - - 0.9 k/w r thja minimal footprint - - 62 6 cm2 cooling area 5) --40 electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =0 v, i d =1 ma 100 - - v gate threshold voltage v gs(th) v ds = v gs , i d =130 a 1.2 1.85 2.4 zero gate voltage drain current i dss v ds =100 v, v gs =0 v, t j =25 c - 0.1 1 a v ds =100 v, v gs =0 v, t j =125 c - 10 100 gate-source leakage current i gss v gs =20 v, v ds =0 v - 1 100 na drain-source on-state resistance r ds(on) v gs =4.5 v, i d =49 a - 7.7 10.4 m : v gs =10 v, i d =98 a - 6.6 8 gate resistance r g - 1.3 - : transconductance g fs | v ds |>2| i d | r ds(on)max , i d =98 a 83 166 - s values 2) see figure 3 thermal resistance, junction 4) - ambient 1) j-std20 and jesd22 3) t jmax =150 c and duty cycle d=0.01 for v gs <-5v 4) device on 40 mm x 40 mm x 1.5 mm epoxy pcb fr4 with 6 cm 2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical in still air. rev. 0.6 page 2 2007-08-30
ipp08cn10l g parameter symbol conditions unit min. typ. max. dynamic characteristics input capacitance c iss - 6470 8610 pf output capacitance c oss - 818 1090 reverse transfer capacitance c rss -43- turn-on delay time t d(on) -18-ns rise time t r -10- turn-off delay time t d(off) -51- fall time t f -7- gate char g e characteristics 5) gate to source charge q gs -24-nc gate to drain charge q gd -15- switching charge q sw -19- gate charge total q g -90- gate plateau voltage v plateau - 3.6 - v output charge q oss v dd =50 v, v gs =0 v -84-nc reverse diode diode continous forward current i s - - 98 a diode pulse current i s,pulse - - 392 diode forward voltage v sd v gs =0 v, i f =98 a, t j =25 c - 1 1.2 v reverse recovery time t rr - 95.4 ns reverse recovery charge q rr - 283 - nc 5) see figure 16 for gate charge parameter definition v r =50 v, i f = i s , d i f /d t =100 a/s t c =25 c values v gs =0 v, v ds =50 v, f =1 mhz v dd =50 v, v gs =10 v, i d =47.5 a, r g =1.6 : v dd =50 v, i d =95 a, v gs =0 to 10 v rev. 0.6 page 3 2007-08-30
ipp08cn10l g 1 power dissipation 2 drain current p tot =f( t c ) i d =f( t c ); v gs ? 10 v 3 safe operating area 4 max. transient thermal impedance i d =f( v ds ); t c =25 c; d =0 z thjc =f( t p ) parameter: t p parameter: d = t p / t single pulse 0.01 0.02 0.05 0.1 0.2 0.5 10 0 10 -1 10 -2 10 -3 10 -4 10 -5 10 0 10 -1 10 -2 t p [s] z thjc [k/w] 0 40 80 120 160 200 0 50 100 150 200 t c [c] p tot [w] 0 20 40 60 80 100 0 50 100 150 200 t c [c] i d [a] 1 s 10 s 100 s 1 ms 10 ms dc 10 3 10 2 10 1 10 0 10 -1 10 3 10 2 10 1 10 0 10 -1 v ds [v] i d [a] rev. 0.6 page 4 2007-08-30
ipp08cn10l g 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); | v ds |>2| i d | r ds(on)max g fs =f( i d ); t j =25 c parameter: t j 3.2 v 3.5 v 4 v 4.5 v 10 v 0 5 10 15 20 0 50 100 150 i d [a] r ds(on) [m : ] 25 c 175 c 0 50 100 150 200 0246 v gs [v] i d [a] 0 20 40 60 80 100 120 140 160 180 200 220 0 40 80 120 160 i d [a] g fs [s] 3 v 3.2 v 3.5 v 4 v 4.5 v 5 v 7.5 v 10 v 0 50 100 150 200 250 300 350 012345 v ds [v] i d [a] rev. 0.6 page 5 2007-08-30
ipp08cn10l g 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d =98 a; v gs =10 v v gs(th) =f( t j ); v gs = v ds parameter: i d 11 typ. capacitances 12 forward characteristics of reverse diode c =f( v ds ); v gs =0 v; f =1 mhz i f =f( v sd ) parameter: t j typ 98 % 0 5 10 15 20 -60 -20 20 60 100 140 180 t j [c] r ds(on) [m : ] 130 a 1300 a 0 0.5 1 1.5 2 2.5 -60 -20 20 60 100 140 180 t j [c] v gs(th) [v] ciss coss crss 10 4 10 3 10 2 10 1 0 20406080 v ds [v] c [pf] 25 c 175 c 25 c, 98% 175 c, 98% 10 0 10 1 10 2 10 3 0 0.5 1 1.5 2 v sd [v] i f [a] rev. 0.6 page 6 2007-08-30
ipp08cn10l g 13 avalanche characteristics 14 typ. gate charge i as =f( t av ); r gs =25 : v gs =f( q gate ); i d =98 a pulsed parameter: t j(start) parameter: v dd 15 drain-source breakdown voltage 16 gate charge waveforms v br(dss) =f( t j ); i d =1 ma 20 v 50 v 80 v 0 2 4 6 8 10 12 0 20406080100 q gate [nc] v gs [v] 90 95 100 105 110 115 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] v gs q gate v gs(th) q g(th) q gs q gd q sw q g 25 c 100 c 150 c 1 10 100 1000 1 10 100 1000 t av [s] i as [a] rev. 0.6 page 7 2007-08-30
ipp08cn10l g pg-to220-3: outline rev. 0.6 page 8 2007-08-30
ipp08cn10l g rev. 0.6 page 9 2007-08-30 published by infineon technologies ag 81726 munich, germany ? infineon technologies ag 2007. all rights reserved. legal disclaimer the information given in this data sheet shall in no event be r egarded as a guarantee of conditions or characteristics (beschaffenheitsgarantie). with respect to an y examples or hints given herein, any typical values stated herein and/or any information regarding the appli cation of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third p arty. information for further information on technology, delivery terms and condi tions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies o ffice. infineon technologies components may only be used in life-suppo rt devices or systems with the express written approval of infineon technologies, if a failure of suc h components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be impl anted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, i t is reasonable to assume that the health of the user or other persons may be endangered.
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